PART |
Description |
Maker |
PTFA041501GL PTFA041501HL |
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ??500 MHz Thermally-Enhanced High Power RF LDMOS FETs 150 W, 420 ?500 MHz UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
Infineon Technologies AG
|
STW9B12G |
Thermally Enhanced Package Design
|
Seoul Semiconductor
|
PTVA123501EFC-15 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
|
PXAC192908FV PXAC192908FV-15 |
Thermally-Enhanced High Power RF LDMOS FET
|
Infineon Technologies A...
|
PPC440EP-3UC667C PPC440EP-3TC667C PPC440EP-3UC667C |
32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, ROHS COMPLIANT, THERMALLY ENHANCED, PLASTIC, BGA-456 32-BIT, 667 MHz, RISC PROCESSOR, PBGA456 35 MM, THERMALLY ENHANCED, PLASTIC, BGA-456
|
Applied Micro Circuits, Corp.
|
PTF080101S |
Thermally-Enhanced High Power RF LDMOS FET 10 W, 860 - 960 MHz
|
Infineon Technologies AG
|
PTFA260851E PTFA260851F |
Thermally-Enhanced High Power RF LDMOS FET 85 W, 2500 鈥?2700 MHz
|
Infineon Technologies AG
|
PTFA210701E PTFA210701F |
Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
PTFA091201HL PTFA091201GL |
Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ??960 MHz Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 ?960 MHz
|
Infineon Technologies AG
|
PTFA241301E PTFA241301F PTFA241301FV1 |
Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420-2480 MHz Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 ?2480 MHz
|
Infineon Technologies AG Infineon Technologies A...
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